SiC Properties
Physical Properties Of Performance SiC
| Property | Value | Method |
|---|---|---|
| Density | 3.21 g/cc | Sink-float and dimension |
| Specific heat | 0.66 J/g °K | Pulsed laser flash |
| Flexural strength |
450 MPa 560 MPa |
4 point bend, RT 4 point bend, 1300° |
| Fracture toughness | 2.94 MPa m1/2 | Microindentation |
| Hardness | 2800 | Vicker's, 500g load |
|
Elastic Modulus (Young's Modulus) |
450 GPa 430 GPa |
4 pt bend, RT 4 pt bend, 1300 °C |
| Grain size | 2 - 10 µm | SEM |
Thermal Properties Of Performance SiC
| Thermal Conductivity | 250 W/m °K | Laser flash method, RT |
| Thermal Expansion (CTE) | 4.5 x 10-6 °K | Room temp to 950 °C, silica dilatometer |
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Electrical Properties Of Performance SiC
Performance SiC is Chemically Vapor Deposited Silicon Carbide which is theoretically dense, pure and chemically inert. It is an advanced ceramic material designed to be used in high temperature, corrosive environments. CVD Materials has engineered the electrical properties of Performance SiC to provide material from less than 1 ohm-cm to greater than 10 4 ohm-cm.
| Performance SiC Grade | Resistivity (ohm-cm) |
|---|---|
| Engineered Low Resistivity | 10-2 |
| Nominal Resistivity | 10-² - 10² - 4 |
Chemical Analysis Of Performance SiC
Performance SiC is Chemically Vapor Deposited Silicon Carbide which is theoretically dense, pure and chemically inert. It is an advanced ceramic material designed to be used in high temperature, corrosive environments. Morgan Advanced Ceramics has engineered the electrical properties of Performance SiC to provide material from less than 1 ohm-cm to greater than 10 4 ohm-cm.
| Typical GDMS Report for CVD SiC | |||
|---|---|---|---|
| Element | Concentration (ppm wt) | Element | Concentration (ppm wt) |
| Li | <0.01 | Ag | <0.05 |
| B | <1.5 | Cd | <0.1 |
| Be | <0.01 | In | <0.1 |
| C | Major | Sn | <0.1 |
| F | <1 | Sb | <0.1 |
| Na | <1 | Te | <0.1 |
| Mg | <0.5 | I | <0.05 |
| Al | <0.2 | Cs | <0.01 |
| Si | Major | Ba | <0.01 |
| P | <0.2 | La | <0.01 |
| S | <0.4 | Ce | <0.01 |
| Cl | <3 | Pr | <0.01 |
| K | <0.1 | Nd | <0.01 |
| Ca | <2 | Sm | <0.01 |
| Sc | <0.05 | Eu | <0.01 |
| Ti | <0.01 | Gd | <0.01 |
| V | <0.01 | Tb | <0.01 |
| Cr | <0.1 | Dy | <0.01 |
| Mn | <0.01 | Ho | <0.01 |
| Fe | <0.1 | Er | <0.01 |
| Co | <0.01 | Tm | <0.01 |
| Ni | <0.05 | Yb | <0.01 |
| Cu | <0.05 | Lu | <0.01 |
| Zn | <0.1 | Hf | <0.05 |
| Ga | <0.05 | Ta | <0.5 |
| Ge | <0.2 | W | <0.05 |
| As | <0.05 | Re | <0.01 |
| Se | <0.05 | Os | <0.01 |
| Br | <0.1 | Ir | <0.01 |
| Rb | <0.05 | Pt | <0.01 |
| Sr | <0.01 | Au | <0.1 |
| Y | <0.01 | Hg | <0.1 |
| Zr | <0.01 | Ti | <0.01 |
| Nb | <0.01 | Pb | <0.05 |
| Mo | <0.05 | Bi | <0.01 |
| Ru | <0.01 | Th | <0.03 |
| Rh | <0.01 | U | <0.01 |
| Pd | <0.05 | ||
Properties determined by glow discharge mass spectroscopy.
